Title :
A new InGaP-GaAs double delta-doped heterojunction bipolar transistor (D3HBT)
Author :
Liu, Wen-Chau ; Cheng, Shiou-Ying ; Chang, Wen-Lung ; Pan, Hsi-jen ; Shie, Yung-Hsin
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
The double delta-doped heterojunction bipolar transistor (D3 HBT) is successfully fabricated with improved current-voltage characteristics by employing the insertion of delta-doped layers at the emitter-base (E-B) and base-collector (B-C) heterojunction. Due to the use of delta-doped layers, the potential spikes at the E-B and BC heterojunctions are suppressed substantially. Thus a higher emitter injection efficiency (current gain) and a lower knee voltage are obtained. From the experimental results, it is shown that the studied D 3HBT device is a good candidate for high-speed and high-power circuit applications
Keywords :
III-V semiconductors; doping profiles; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave power transistors; power bipolar transistors; InGaP-GaAs; base-collector heterojunction; current gain; current-voltage characteristics; double delta-doped HBT; emitter injection efficiency; emitter-base heterojunction; heterojunction bipolar transistor; high-power circuit applications; high-speed circuit applications; knee voltage reduction; potential spikes suppression; Bipolar transistors; Conducting materials; Current-voltage characteristics; DH-HEMTs; Double heterojunction bipolar transistors; Gallium arsenide; Heterojunction bipolar transistors; Knee; Performance gain; Voltage;
Conference_Titel :
Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4308-5
DOI :
10.1109/ICMMT.1998.768236
