Title :
Investigation of the Influence of Zn-diffusion profile on the electrical properties of InGaAs/InP photodiodes
Author :
Djedidi, A. ; Rouvie, A. ; Reverchon, J.L. ; Pires, M. ; Chevalier, N. ; Mariolle, D.
Author_Institution :
III-V Lab., Alcatel-Thales, Palaiseau, France
Abstract :
Dark current is a drastic specification for any kind of sensor and particularly for imagers dedicated to low light level. We propose here a method for optimizing the InGaAs photodiode properties. An anomalous doping profile feature revealed by scanning capacitance microscopy is counterbalanced by modifying Zn-diffusion process. We analyze the electrical results before further investigation.
Keywords :
capacitance; dark conductivity; diffusion; doping profiles; gallium arsenide; indium compounds; optimisation; photodiodes; zinc; InGaAs photodiode properties; InGaAs-InP; InGaAs-InP photodiodes; Zn; Zn-diffusion process; Zn-diffusion profile; anomalous doping profile; dark current; electrical properties; imagers; low light level; optimization; scanning capacitance microscopy; sensor; Dark current; Indium gallium arsenide; Indium phosphide; Photodiodes; Standards; Tunneling; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4673-1725-2
DOI :
10.1109/ICIPRM.2012.6403332
