High reliable InGaAsP buried heterostructure laser diode fabricated by Cl2/N2-RIBE and MOVPE

We have demonstrated high reliable InGaAsP/InP laser diodes (LDs) with buried heterostructure (BH) formed by Cl-based dry etching technique and metalorganic vapor phase epitaxy (MOVPE) regrowth for the first time. Active stripes are formed on n-type substrate by electron cyclotron resonance reactive ion beam etching (ECR-RIBE) with Cl₂ and N₂ mixture. After the formation of active stripes by Cl₂/N₂ ECR-RIBE the etched surface is treated slightly with wet chemical etching to remove damaged layers and the active stripes are buried with MOVPE. An average threshold current decreases from 27 mA to 18.5 mA by the wet chemical treatment with good uniformity. In the aging test no degradation is observed after 5000 hrs operation at 70°C under 10 mW APC condition. The mean time to failure (MTTF) for the operation at 70°C is estimated to be 2×10⁵ hrs