Title :
8-watt high efficiency narrow band power GaAs MESFET by synthesizing power technology
Author :
Cong, Gu ; Longsheng, Wu ; Gang, Qian ; Youbao, Liu
Author_Institution :
Shanxi Lishan Microelectron. Inst., China
Abstract :
A 8-watt power GaAs MESFET, consisting of two 6×0.5×2100 μm multi-cell FET of about 4.0 W, can be designed and fabricated in a two-way traveling-wave divider/combiner. The synthesizing power transistor can be realized, producing 8 watts ±1.5 dBm from 5.0 to 6.0 GHz, with a minimum of 7 watts, by using two all-pass matching networks. A two-way hybrid power combining scheme, making use of two 4-watt off-chips, producing 8-watt of power output, is discussed here. Meanwhile, the application of lossy matching networks that absorb the MESFET input capacitance into a simple filter network to provide simultaneous gain flatness and input match is described in this paper
Keywords :
III-V semiconductors; capacitance; equivalent circuits; gallium arsenide; hybrid integrated circuits; impedance matching; microwave field effect transistors; microwave integrated circuits; microwave power transistors; power MESFET; power combiners; semiconductor device models; 4 to 9 W; 5 to 6 GHz; 8 W; GaAs; GaAs power MESFET; MESFET input capacitance; all-pass matching networks; filter network; gain flatness; high efficiency MESFET; hybrid MIC; input matching; lossy matching networks; multi-cell FET; narrow band MESFET; power transistor; synthesizing power technology; two-way hybrid power combining scheme; two-way traveling-wave divider/combiner; Capacitance; FETs; Gallium arsenide; Impedance matching; MESFETs; Microwave communication; Microwave integrated circuits; Millimeter wave radar; Narrowband; Power transistors;
Conference_Titel :
Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4308-5
DOI :
10.1109/ICMMT.1998.768239
