Power GaAs FET temperature dependent modeling and circuit simulation validation

Author

Xuebang, Gao ; Bin, Guo

Author_Institution

Hebei Semicond. Res. Inst., China

fYear

1998

fDate

1998

Firstpage

116

Lastpage

119

Abstract

A novel power GaAs FET large-signal modeling method is presented in this paper. The method is based on the pulsed I-V measurements without pre-bias DC at different temperatures. The model parameters including temperature coefficients are extracted. Effects of self-heating and ambient temperatures are simulated by using a extended harmonic balance technique. The simulation results are compared to measurements of output power and efficiency for a C-band power amplifier

Keywords

III-V semiconductors; circuit simulation; equivalent circuits; gallium arsenide; microwave field effect transistors; microwave power transistors; power MESFET; semiconductor device models; thermal analysis; C-band power amplifier; FET temperature dependent modeling; GaAs; GaAs power MESFET; ambient temperature effects; circuit simulation validation; extended harmonic balance technique; large-signal modeling method; pulsed I-V measurements; self-heating; temperature coefficients; Circuit simulation; Current measurement; FETs; Gallium arsenide; High power amplifiers; Operational amplifiers; Power measurement; Pulse amplifiers; Pulse measurements; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4308-5

Type

conf

DOI

10.1109/ICMMT.1998.768240

Filename

768240