Title :
Characteristics and applications of dual-gate FET
Author :
Gao, Jun ; Cao, Xiang-yu
Author_Institution :
Air Force Missile Inst., Shaanxi, China
Abstract :
In this paper, the DC characteristics and working model of a dual-gate FET are explained. A microwave self-oscillating mixer with local frequencies stabilization by dielectric resonators is designed and developed using a dual-gate FET. A high performance device is obtained. The experimental results have shown that at S-band, a conversion gain of 5.0 dB and a noise figure of 9.2 dB are obtained
Keywords :
dielectric resonators; frequency stability; microwave field effect transistors; microwave mixers; 5 dB; 9.2 dB; DC characteristics; S-band; dielectric resonators; dual-gate FET; frequency stability; microwave self-oscillating mixer; Circuits; Dielectrics; Frequency conversion; Local oscillators; Microwave FETs; Mixers; Resonator filters; Stability; Transconductance; Voltage-controlled oscillators;
Conference_Titel :
Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4308-5
DOI :
10.1109/ICMMT.1998.768242
