Title :
Rapid estimation technology for highly reliable GaAs power field-effect transistor in C band
Author :
Sheng, Xu Li ; Tan Zong Xin ; Bo, Cui
Author_Institution :
The 13th Res. Inst., Minist. of EI, Shijiazhuang, China
Abstract :
This paper introduces a way of rapidly estimating a GaAs microwave power FET-temperature accelerated life test. It is used to estimate the reliability of a DX0011 type GaAs microwave power FET. When the bias is VDs=8V, IDS=375 mA, and the channel temperature T ch=110%, the failure rate under 10 years operation is λ≈27FIT. The main failure mode is IDSS degradation, and the activation energy is about 1.28 eV
Keywords :
III-V semiconductors; failure analysis; gallium arsenide; life testing; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device reliability; semiconductor device testing; 110 C; 375 mA; 8 V; C band operation; DX0011 type; GaAs; GaAs power FET; IDSS degradation; activation energy; failure mode; failure rate; high reliability FET; microwave power FET; power field-effect transistor; rapid estimation technique; reliability estimation; temperature accelerated life test; Circuit testing; Degradation; Electric variables; Gallium arsenide; Life estimation; Life testing; Microwave FETs; Microwave devices; Temperature; Thermal resistance;
Conference_Titel :
Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4308-5
DOI :
10.1109/ICMMT.1998.768243
