Title :
Model of quasi-vertical planar anti-parallel Schottky diode
Author :
Zhang, Jian ; Piironen, Petri V. ; Möttönen, Ville S. ; Louhi, Jyrki T. ; Lehto, Arto O. ; Simon, Ansgar ; Lin, Chih I. ; Raisanen, Antti V.
Author_Institution :
Radio Lab., Helsinki Univ. of Technol., Espoo, Finland
Abstract :
A model of Quasi-Vertical planar Anti-parallel Schottky Diode (QVPAPD) is developed by using electromagnetic (EM) analyses of the diode structure. The mounting structure of the diode is taken into account. The model is used in the design of a 220 GHz subharmonic mixer with the QVPAPD. A preliminary experimental result is given
Keywords :
Schottky diode mixers; Schottky diodes; equivalent circuits; millimetre wave diodes; millimetre wave mixers; semiconductor device models; 10.5 dB; 220 GHz; 6.2 dB; EHF; EM analyses; MM-wave diode model; anti-parallel Schottky diode; diode structure analysis; electromagnetic analysis; mounting structure; planar Schottky diode; quasi-vertical Schottky diode; subharmonic mixer; Conducting materials; Electromagnetic analysis; Equivalent circuits; Finite element methods; Frequency; Microstrip; Passivation; Schottky diodes; Substrates; Wideband;
Conference_Titel :
Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4308-5
DOI :
10.1109/ICMMT.1998.768245
