DocumentCode
2842725
Title
Development of micro-bump-bonded processes for 3DIC stacking with high throughput
Author
Juang, Jing-Ye ; Lu, Su-Tsai ; Chung, Su-Ching ; Cheng, Su-Mei ; Lu, Yu-Lan ; Peng, Jong-Shiou ; Chen, Tai-Hong
Author_Institution
Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan
fYear
2011
fDate
19-21 Oct. 2011
Firstpage
366
Lastpage
369
Abstract
Various approaches of high throughput bonding processes were investigated in the micro-bump-bonded processes for 3DIC stacking. The two-step bonding methods, TCB + reflow, TCB + post-bonding and conventional flip-chip process were evaluated in this study. Moreover, the two-step process with different TCB process times (1s, 3s and 5 s) were implemented into the first step. The partial melted joints, which were attained by TCB process, were expected to be fully bonded by the second step (reflow or post-bonding). Then, the temperature cycling test (TCT) was performed to verify reliability performance of the micro-bump-bonded interconnects. Based on the experimental and reliability results, the optimized conditions for the two-step bonding methods and a cost effective solution for the applications of 3DIC stacking can be established.
Keywords
flip-chip devices; integrated circuit bonding; integrated circuit reliability; integrated circuit testing; reflow soldering; three-dimensional integrated circuits; 3DIC stacking; TCB + post-bonding; TCB + reflow; flip-chip devices; micro-bump-bonded interconnects; partial melted joints; reliability performance; temperature cycling test; two-step bonding methods; Bonding; Flip chip; Joints; Reliability; Stacking; Throughput;
fLanguage
English
Publisher
ieee
Conference_Titel
Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2011 6th International
Conference_Location
Taipei
ISSN
2150-5934
Print_ISBN
978-1-4577-1387-3
Electronic_ISBN
2150-5934
Type
conf
DOI
10.1109/IMPACT.2011.6117238
Filename
6117238
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