DocumentCode
2842742
Title
Monte Carlo simulation of 94 GHz InP Gunn diodes
Author
Dunn, G.M. ; Kearney, M.J.
Author_Institution
Dept. of Electron. & Electr. Eng., Loughborough Univ., UK
fYear
1998
fDate
1998
Firstpage
134
Lastpage
137
Abstract
We have investigated three types of InP Gunn diode using a Monte Carlo simulation method, and have attempted to optimize the performance of these devices under a 94 GHz driving potential. The maximum efficiency, natural frequencies and power output are all found to be very significantly affected by the operating temperature, device length and potential bias
Keywords
Gunn diodes; III-V semiconductors; Monte Carlo methods; indium compounds; millimetre wave diodes; semiconductor device models; 94 GHz; InP; InP Gunn diodes; Monte Carlo simulation; device length; maximum efficiency; natural frequencies; operating temperature; performance optimisation; potential bias; power output; Diodes; Doping profiles; Electrons; Frequency; Gallium arsenide; Gunn devices; Indium phosphide; Monte Carlo methods; Semiconductor process modeling; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4308-5
Type
conf
DOI
10.1109/ICMMT.1998.768246
Filename
768246
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