Design of high-current L-valley GaAs=AlAs0.56Sb0.44/InP (111) ultra-thin-body nMOSFETs

Author

Mehrotra, Sanjay ; Povolotskyi, Michael ; Law, James ; Kubis, Tillmann ; Klimeck, Gerhard ; Rodwell, M.

Author_Institution

Network for Comput. Nanotechnol., Purdue Univ., West Lafayette, IN, USA

fYear

2012

fDate

27-30 Aug. 2012

Firstpage

151

Lastpage

154

Abstract

We propose and analyze a high-current III-V transistor design using electron transport in the Γ- and L-valleys of (111) GaAs. Using sp[su3}d⁵s* empirical tight-binding model for band-structure calculations and the top-of-the-barrier transport model, improved drive current is demonstrated using L-valley transport in a strained GaAs channel grown on an (111) InP substrate. At a body thickness of 2 nm the (111)GaAs/InP MOSFET design outperforms both (100) Si and (100) GaAs/InP for all EOTs larger than 0.3nm.

Keywords

III-V semiconductors; MOSFET; aluminium compounds; band structure; gallium arsenide; indium compounds; semiconductor device models; tight-binding calculations; (111) GaAs Γ-valley; (111) GaAs L-valley; (111) InP substrate; (111)GaAs-InP MOSFET design; GaAs-AlAs_0.56Sb_0.44-InP; L-valley transport; band-structure calculations; body thickness; electron transport; empirical tight-binding model; high-current III-V transistor design; high-current L-valley ultrathin-body nMOSFET design; improved drive current; size 2 nm; strained GaAs channel; top-of-the-barrier transport model; Capacitance; Gallium arsenide; Indium phosphide; Lattices; Logic gates; MOSFET circuits; Silicon; GaAs; InP; L-valley; MOSFET; tight-binding; top-of-the-barrier;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2012 International Conference on

Conference_Location

Santa Barbara, CA

ISSN

1092-8669

Print_ISBN

978-1-4673-1725-2

Type

conf

DOI

10.1109/ICIPRM.2012.6403344

Filename

6403344