Design of MMIC LNA for 1.9 GHz CDMA portable communication

Author

Fujiang Lin ; Liu, Li ; Kooi, P.S. ; Leong, M.S.

Author_Institution

Inst. of Microelectron., Singapore

fYear

1998

fDate

1998

Firstpage

205

Lastpage

208

Abstract

This work describes an on-chip matching MMIC LNA which was optimized for noise figure by careful selection of FET size, bias, and thorough consideration of its gamma opt and Rn characteristics. A new in-house developed inductor model and real-world extracted EEFET3 model are employed in order to assure accurate simulation. A source peaking technique is used to lower input return loss. The developed on-chip matching LNA shows strong robustness that makes it easy to fabricate with the existing 0.5 μm GaAs MESFET process. Its low current consumption (3.2 mA) and high linearity (P_{in 1 dB}=-8 dBm, I IP3=7.6 dBm, ACPR=-70 dBc) also make it suitable for CDMA portable wireless communication

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; code division multiple access; field effect MMIC; gallium arsenide; impedance matching; integrated circuit design; integrated circuit noise; mobile radio; 0.5 micron; 1.9 GHz; 3.2 mA; CDMA portable communication; GaAs; GaAs MESFET process; MMIC LNA design; extracted EEFET3 model; high linearity LNA; input return loss reduction; onchip matching LNA; portable wireless communication; source peaking technique; spiral inductor model; FETs; Gallium arsenide; Inductors; Linearity; MESFETs; MMICs; Multiaccess communication; Noise figure; Optimized production technology; Robustness;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4308-5

Type

conf

DOI

10.1109/ICMMT.1998.768261

Filename

768261