DocumentCode
2842973
Title
Study of the Ni-InGaAs alloy as an ohmic contact to the p-type base of InP/InGaAs HBTs
Author
Mehari, S. ; Gavrilov, A. ; Cohen, Sholom ; Ritter, Daniel
Author_Institution
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
fYear
2012
fDate
27-30 Aug. 2012
Firstpage
200
Lastpage
203
Abstract
Following the silicide to silicon contact approach, Ni-InGaAs alloy was studied as an ohmic contact to p-type InGaAs. The Schottky barrier height of this system is similar to that of conventional metals such as Ti, but the interface is oxide free. The obtained specific contact resistivity to p-type material was substantially lower than that of standard Pt based metallic contacts. However, if employed for the fabrication of the base contact to HBTs, nickel thickness variations may degrade the performance of the base collector junction.
Keywords
III-V semiconductors; Schottky barriers; electrical resistivity; gallium arsenide; heterojunction bipolar transistors; indium compounds; ohmic contacts; InP-InGaAs; Schottky barrier height; contact resistivity; ohmic contact; p-type base; Conductivity; Indium gallium arsenide; Indium phosphide; Nickel; Schottky diodes; Silicides; HBT; Ni-InGaAs; TLM; ohmic contacts;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location
Santa Barbara, CA
ISSN
1092-8669
Print_ISBN
978-1-4673-1725-2
Type
conf
DOI
10.1109/ICIPRM.2012.6403357
Filename
6403357
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