DocumentCode
2842995
Title
8 mm GaAs power monolithic integrated circuit
Author
MuYi, Zhang ; Yuqing, Zhang
Author_Institution
13th Inst., Minist. of EI, Hebei, China
fYear
1998
fDate
1998
Firstpage
222
Lastpage
225
Abstract
The design, fabrication and performance measurement of an 8 mm monolithic IC based on a GaAs MESFET device with a 0.4 μm gate width are presented. The performance characteristics of the MIMIC are: Pout>100 mW, Ga>3 dB, Poutmax=150 mW at 32-33 GHz
Keywords
III-V semiconductors; MESFET integrated circuits; equivalent circuits; field effect MIMIC; gallium arsenide; integrated circuit design; power integrated circuits; semiconductor device models; 0.4 micron; 100 to 150 mW; 3 to 3.5 dB; 32 to 33 GHz; 8 mm; EHF; GaAs; GaAs MESFET IC; GaAs power MIMIC; IC design; IC fabrication; MM-wave monolithic IC; monolithic integrated circuit; performance measurement; Circuit topology; Computational Intelligence Society; Equivalent circuits; Fabrication; Gallium arsenide; Gold; Impedance matching; MESFET circuits; MMICs; Monolithic integrated circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4308-5
Type
conf
DOI
10.1109/ICMMT.1998.768265
Filename
768265
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