Title :
Dual-gate FET mixer design and fabrication for MMIC´s
Author :
Sun, Xiaowei ; Cheng, Zhiqun ; Xia, Guanqun
Author_Institution :
Inst. of Metall., Acad. Sinica, Shanghai, China
Abstract :
A design method and experimental investigation of the dual-gate MESFET mixer for MMIC´s are presented. The RF/LO/IF matching circuits and bias line are implemented on a 0.75×1.5 mm chip. The initial measurement results show a conversion loss of 7 dB with 5.5 dBm LO power. The LO to RF isolation is better than 30 dB for L band operation
Keywords :
MESFET integrated circuits; MMIC mixers; UHF integrated circuits; UHF mixers; field effect MMIC; impedance matching; integrated circuit design; 0.5 to 2.5 GHz; 7 dB; IC fabrication; IF matching circuits; L-band operation; LO matching circuits; MESFET mixer; RF matching circuit; bias line; conversion loss; design method; dual-gate FET mixer; Design methodology; FETs; Fabrication; Gallium arsenide; Local oscillators; MESFETs; MIM capacitors; MMICs; Radio frequency; Thin film inductors;
Conference_Titel :
Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4308-5
DOI :
10.1109/ICMMT.1998.768267
