DocumentCode
2843031
Title
Dual-gate FET mixer design and fabrication for MMIC´s
Author
Sun, Xiaowei ; Cheng, Zhiqun ; Xia, Guanqun
Author_Institution
Inst. of Metall., Acad. Sinica, Shanghai, China
fYear
1998
fDate
1998
Firstpage
230
Lastpage
233
Abstract
A design method and experimental investigation of the dual-gate MESFET mixer for MMIC´s are presented. The RF/LO/IF matching circuits and bias line are implemented on a 0.75×1.5 mm chip. The initial measurement results show a conversion loss of 7 dB with 5.5 dBm LO power. The LO to RF isolation is better than 30 dB for L band operation
Keywords
MESFET integrated circuits; MMIC mixers; UHF integrated circuits; UHF mixers; field effect MMIC; impedance matching; integrated circuit design; 0.5 to 2.5 GHz; 7 dB; IC fabrication; IF matching circuits; L-band operation; LO matching circuits; MESFET mixer; RF matching circuit; bias line; conversion loss; design method; dual-gate FET mixer; Design methodology; FETs; Fabrication; Gallium arsenide; Local oscillators; MESFETs; MIM capacitors; MMICs; Radio frequency; Thin film inductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4308-5
Type
conf
DOI
10.1109/ICMMT.1998.768267
Filename
768267
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