S-band PHEMT monolithic frequency variable receiver front-end

Author

Junxian, Wang ; Yuanfei, Cen ; Xiaojian, Chen

Author_Institution

Nanjing Electron. Devices Inst., China

fYear

1998

fDate

1998

Firstpage

234

Lastpage

237

Abstract

An S-band GaAs PHEMT MMIC receiver front-end which uses a novel monolithic mixer has been designed by using OmniSys and LIBRA software tools and developed in a 3 inch GaAs process at NEDI. The whole circuit provides 50.5±0.5 dB conversion gain with less than 1.5 dB noise figure in the 2.0-2.5 GHz frequency band. Only 0 dBm LO power of the mixer was consumed in this MMIC front end

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; MMIC mixers; UHF amplifiers; UHF integrated circuits; UHF mixers; circuit CAD; equivalent circuits; field effect MMIC; gallium arsenide; integrated circuit design; radio receivers; 1.5 dB; 2 to 2.5 GHz; 3 inch GaAs process; 50.5 dB; GaAs; GaAs PHEMT; LIBRA software tool; LNA; MMIC receiver front-end; NEDI; OmniSys software tool; S-band operation; low-noise amplifier; monolithic frequency variable receiver front-end; monolithic mixer; pseudomorphic HEMT; Circuits; Frequency; Gallium arsenide; HEMTs; Low-noise amplifiers; Noise figure; PHEMTs; Radiofrequency amplifiers; Resistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4308-5

Type

conf

DOI

10.1109/ICMMT.1998.768268

Filename

768268