Title :
2-18 GHz GaAs monolithic ultra-broadband amplifier
Author :
Lingli, Yu ; Kuizhang, Ding ; Qingguo, He
Author_Institution :
13th Inst., Minist. of EI, China
Abstract :
The design principle and research process of a 2 to 18 GHz GaAs microwave low noise ultrabroadband monolithic amplifier is described in this paper. Its final results are presented in the 2-18 GHz frequency range, the noise figure is 4.2-6.2 dB, the gain is 13.5-18.3 dB, input VSWR is less than 2.0 output VSWR is less than 2.5 for a packaged two stage amplifier
Keywords :
III-V semiconductors; MMIC amplifiers; distributed amplifiers; field effect MMIC; gallium arsenide; integrated circuit design; integrated circuit noise; wideband amplifiers; 13.5 to 18.3 dB; 2 to 18 GHz; 4.2 to 6.2 dB; FET distributed amplifier; GaAs; GaAs monolithic ultra-broadband amplifier; SHF; design principle; microwave LNA; microwave low noise amplifier; packaged two stage amplifier; Broadband amplifiers; Distributed amplifiers; Distributed parameter circuits; FETs; Feedback circuits; Frequency; Gallium arsenide; Low-noise amplifiers; MMICs; Noise figure;
Conference_Titel :
Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4308-5
DOI :
10.1109/ICMMT.1998.768269
