DocumentCode :
2843089
Title :
Thermal characterization of a wide I/O 3DIC
Author :
Tsai, Kuo-ying ; Ku, Shih-chang ; Chang, Wen-yuan ; Tsai, Hong-jie
Author_Institution :
Manuf. Product Eng., VIA Technol., Taipei, Taiwan
fYear :
2011
fDate :
19-21 Oct. 2011
Firstpage :
261
Lastpage :
264
Abstract :
The thermal performance of a specific 3D IC structure- a wide I/O package is investigated with parameterized factors like TSV diameter, material of micro bumps, and TSV allocation strategy. TSV diameter and material of micro bump are found no significant effect on thermal performance of the illustrated wide I/O package. However, the hot spot location is changed by the TSV allocation. The results suggest the better locations for thermal diodes would be close to the TSV or die corners. Also this work concludes that the “TSV peripheral” allocation performs the better cooling than the others.
Keywords :
packaging; three-dimensional integrated circuits; TSV; die corners; micro bumps; thermal characterization; thermal diodes; three-dimensional integrated circuits; through-silicon-via technology; wide I/O package; Heating; Materials; Random access memory; Resource management; Three dimensional displays; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2011 6th International
Conference_Location :
Taipei
ISSN :
2150-5934
Print_ISBN :
978-1-4577-1387-3
Electronic_ISBN :
2150-5934
Type :
conf
DOI :
10.1109/IMPACT.2011.6117256
Filename :
6117256
Link To Document :
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