Title :
Lateral scalability of inverted p-down InAlAs/InGaAs avalanche photodiode
Author :
Nada, Masahiro ; Yokoyama, Haruki ; Muramoto, Yoshifumi ; Ishibashi, Takayuki ; Kodama, Shinsuke
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
Abstract :
This work investigated the field confinement behavior and junction size scaling for an inverted p-down avalanche photodiode, which requires no selective diffusion or ion-implantation and regrowth techniques. With this structure, the small spread of electric field of only 1 μm is obtained. The maximum 3-dB bandwidth of 23 GHz at the multiplication factor of 4.5 is obtained with the diameter of 20 μm, with responsivity as high as 0.91 A/W. These results indicate that the structure is favorable for high-speed and high-sensitivity operation.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; electric fields; gallium arsenide; indium compounds; optical receivers; photodetectors; InAlAs-InGaAs; bandwidth 23 GHz; electric field; field confinement behavior; high-sensitivity operation; high-speed operation; inverted p-down avalanche photodiode; junction size scaling; lateral scalability; multiplication factor; responsivity; size 20 mum; Absorption; Area measurement; Avalanche photodiodes; Bandwidth; Current measurement; Dark current; Electric fields; Avalanche breakdown; High-speed electronics; III–V semiconductor materials; Optical fiber communication; Optical receivers; Optoelectronic devices; Photodiodes;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4673-1725-2
DOI :
10.1109/ICIPRM.2012.6403361
