Title :
Low threshold 1.3 μm InAsP MQW lasers using n-type modulation doping grown by gas-source molecular-beam epitaxy
Author :
Shimizu, H. ; Kumada, K. ; Yamanaka, N. ; Iwai, N. ; Mukaihara, T. ; Nishikata, K. ; Kasukawa, A.
Author_Institution :
Furukawa Electr. Co. Ltd., Yokohama, Japan
Abstract :
We investigated the effect of n-type modulation doping as well as growth temperature on the threshold current density of 1.3 μm InAsP strained MQW lasers grown by gas-source MBE (GSMBE) for the first time and have obtained threshold current density as low as 250 A/cm2 for 1200 μm long devices
Keywords :
III-V semiconductors; chemical beam epitaxial growth; indium compounds; internal stresses; quantum well lasers; semiconductor doping; semiconductor growth; semiconductor quantum wells; 1.3 mum; 1200 mum; GSMBE; InAsP; InAsP strained MQW lasers; gas-source molecular-beam epitaxy; growth temperature; n-type modulation doping; threshold current density; Doping profiles; Epitaxial layers; Gas lasers; Optical arrays; Quantum well devices; Quantum well lasers; Semiconductor laser arrays; Silicon; Temperature; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712743
