Selective-area growth InP-based nanowires and their optical properties

Author

Motohisa, J.

Author_Institution

Grad. Sch. of Inf. Sci. & Technol., Hokkaido Univ., Sapporo, Japan

fYear

2012

fDate

27-30 Aug. 2012

Firstpage

249

Lastpage

252

Abstract

I describe our study on the growth of InP-based nanowires (NW) by selective-area metal-organic vapor-phase epitaxy (SA-MOVPE) and their optical properties. Vertically-aligned InP NWs were grown on InP (111)A oriented substrates, and they exhibited transition of crystal structures depending on the growth conditions. Laterally or vertically heterostructured NWs were also grown by SA-MOVPE based on InP NWs, and their optical properties were studied by using μ-PL measurement. InP NWs with a vertical pn-junction were also grown and was applied to NW light-emitting diodes (LEDs).

Keywords

III-V semiconductors; MOCVD; indium compounds; light emitting diodes; nanofabrication; nanowires; optical properties; p-n junctions; vapour phase epitaxial growth; μ-PL measurement; InP; InP (111)A oriented substrates; InP-based nanowires; LED; NW light emitting diodes; SA-MOVPE; crystal structure transition; optical properties; selective-area growth; selective-area metal-organic vapor-phase epitaxy; vertical pn-junction; vertically-aligned InP NWs; Crystals; Indium phosphide; Light emitting diodes; Metals; Nanowires; Optical imaging; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2012 International Conference on

Conference_Location

Santa Barbara, CA

ISSN

1092-8669

Print_ISBN

978-1-4673-1725-2

Type

conf

DOI

10.1109/ICIPRM.2012.6403370

Filename

6403370