DocumentCode :
2843325
Title :
Enhancement of characteristic temperature in In0.81Ga 0.19As/InGaAsP multiple quantum well laser operating at 1.74 μm for laser monitor
Author :
Ubukata, Akinori ; Dong, Jie ; Matsumoto, Koh
Author_Institution :
Tsukuba Labs., Nippon Sanso Corp., Ibaraki, Japan
fYear :
1998
fDate :
11-15 May 1998
Firstpage :
721
Lastpage :
724
Abstract :
InGaAs/InGaAsP compressively strained quantum well lasers operating at 1.74 μm has been fabricated with the thin carrier blocking layers sandwiching the active layer for carrier confinement. The laser characteristic temperature (T0) of 85 K has been obtained, which is a high value in ever reported InGaAsP lasers in this wavelength range
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; 1.74 mum; 85 K; In0.81Ga0.19As-InGaAsP; In0.81Ga0.19As/InGaAsP multiple quantum well laser; carrier confinement; characteristic temperature enhancement; thin carrier blocking layers; Carrier confinement; Indium gallium arsenide; Optical materials; Optical sensors; Optical waveguides; Photonic band gap; Quantum well lasers; Semiconductor lasers; Temperature; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
ISSN :
1092-8669
Print_ISBN :
0-7803-4220-8
Type :
conf
DOI :
10.1109/ICIPRM.1998.712744
Filename :
712744
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2843325
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