Title :
Site-controlled growth of InP/InGaP quantum dots
Author :
Baumann, V. ; Stumpf, Frederic ; Kremling, S. ; Steinl, T. ; Forchel, A. ; Schneider, C. ; Hofling, S. ; Kamp, M.
Author_Institution :
Wilhelm Conrad Rontgen Res. Center for Complex Mater. Syst., Univ. Wurzburg, Wurzburg, Germany
Abstract :
We report on site-controlled growth of InP/InGaP quantum dots (QDs) on GaAs substrates. Shallow nanoholes etched into a InGaP layer are used as nucleation sites for the QDs. Optimized growth conditions and the use of strain mediated nucleation allow us to realize QD arrays with excellent long range ordering on hole pitches as large as 1.25 μm. Single QD lines with an average linewidth of 553 μeV and best values below 200 μeV are observed. Second-order photon-autocorrelation measurements show clear single photon emission with g(2)(0)=0.13±0.01.
Keywords :
III-V semiconductors; etching; gallium compounds; indium compounds; molecular beam epitaxial growth; nanofabrication; nanostructured materials; nucleation; photoelectron spectra; photon correlation spectroscopy; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; GaAs; GaAs substrates; InP-InGaP; etching; hole pitches; photon emission; quantum dots; second-order photon-autocorrelation measurements; shallow nanoholes; site-controlled growth; strain mediated nucleation; Gallium arsenide; Indium phosphide; Photonics; Quantum dots; Strain; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4673-1725-2
DOI :
10.1109/ICIPRM.2012.6403373
