Title :
SiGe 135-GHz amplifier with inductive positive feedback operating near fmax
Author :
Hyunchul Kim ; Jongwon Yun ; Kiryong Song ; Jae-Sung Rieh
Author_Institution :
Sch. of Electr. Eng., Korea Univ., Seoul, South Korea
Abstract :
A common base five-stage D-band amplifier developed in a 0.18-μm SiGe HBT technology is presented. An inductive positive feedback technique is employed to enhance the gain, leading to 12.2 dB peak gain at 135 GHz with a power consumption of 67.2 mW. Measured output saturated power was - 5.8 dBm. The total chip area including pads is 1.54 × 0.56 mm2.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; millimetre wave amplifiers; power consumption; HBT technology; SiGe; five-stage D-band amplifier; frequency 135 GHz; gain 12.2 dB; inductive positive feedback; inductive positive feedback technique; power 67.2 mW; power consumption; size 0.18 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2013.1660
