IGBT-bipolar discrete Darlington power switches: performance and design

Author

Biswas, Sujit K. ; Basak, Biswarup ; Rajashekara, K.S.

Author_Institution

Dept. of Electr. Eng., Jadavpur Univ., Calcutta, India

fYear

1991

fDate

Sept. 28 1991-Oct. 4 1991

Firstpage

1483

Abstract

An IGBT (insulated-gate bipolar transistor)-bipolar discrete Darlington power switch is presented. The main high-current bipolar power switch is driven by a lower current IGBT, yielding a switch with low drive requirements and high current handling capacity. The power dissipation is lower than that of a MOS-bipolar Darlington. The behavior of such a switch is investigated using discrete device models and an important parasitic network. Some of the important design parameters of the switch and drive circuit are discussed together with possible ways of improving circuit performance. Some aspects of protection and paralleling are also presented. The analysis and discussions are supported by oscillograms from laboratory experiments.<>

Keywords

driver circuits; insulated gate bipolar transistors; power transistors; semiconductor switches; IGBT-bipolar discrete Darlington power switches; discrete device models; drive circuit; oscillograms; parasitic network; Bipolar transistors; Current density; Drives; Equivalent circuits; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Strontium; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 1991., Conference Record of the 1991 IEEE

Conference_Location

Dearborn, MI, USA

Print_ISBN

0-7803-0453-5

Type

conf

DOI

10.1109/IAS.1991.178056

Filename

178056