Title :
IGBT-bipolar discrete Darlington power switches: performance and design
Author :
Biswas, Sujit K. ; Basak, Biswarup ; Rajashekara, K.S.
Author_Institution :
Dept. of Electr. Eng., Jadavpur Univ., Calcutta, India
fDate :
Sept. 28 1991-Oct. 4 1991
Abstract :
An IGBT (insulated-gate bipolar transistor)-bipolar discrete Darlington power switch is presented. The main high-current bipolar power switch is driven by a lower current IGBT, yielding a switch with low drive requirements and high current handling capacity. The power dissipation is lower than that of a MOS-bipolar Darlington. The behavior of such a switch is investigated using discrete device models and an important parasitic network. Some of the important design parameters of the switch and drive circuit are discussed together with possible ways of improving circuit performance. Some aspects of protection and paralleling are also presented. The analysis and discussions are supported by oscillograms from laboratory experiments.<>
Keywords :
driver circuits; insulated gate bipolar transistors; power transistors; semiconductor switches; IGBT-bipolar discrete Darlington power switches; discrete device models; drive circuit; oscillograms; parasitic network; Bipolar transistors; Current density; Drives; Equivalent circuits; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Strontium; Switches; Switching circuits;
Conference_Titel :
Industry Applications Society Annual Meeting, 1991., Conference Record of the 1991 IEEE
Conference_Location :
Dearborn, MI, USA
Print_ISBN :
0-7803-0453-5
DOI :
10.1109/IAS.1991.178056
