Insulated gate bipolar transistor (IGBT) modeling using IG-SPICE

Author

Mitter, Chang Su ; Hefner, Allen R. ; Chen, Dan Y. ; Lee, Fred C.

Author_Institution

Virginia Power Electron. Center, Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA

fYear

1991

fDate

Sept. 28 1991-Oct. 4 1991

Firstpage

1515

Abstract

A physics-based model for the insulated gate bipolar transistor (IGBT) is implemented into the circuit simulation package IG-SPICE. Based on analytical equations describing the semiconductor physics, the model accurately describes the nonlinear junction capacitances, moving boundaries, recombination, and carrier scattering, and effectively predicts the device conductivity modulation. The procedure used to incorporate the model into IG-SPICE, and various methods necessary to ensure convergence are described. The effectiveness of the SPICE-based IGBT model is demonstrated by investigating the static and dynamic current sharing of paralleled IGBTs with different device model parameters. The simulation results are verified by comparison with experimental results.<>

Keywords

circuit analysis computing; digital simulation; insulated gate bipolar transistors; semiconductor device models; IG-SPICE; carrier scattering; circuit simulation package; conductivity modulation; insulated gate bipolar transistor; moving boundaries; nonlinear junction capacitances; recombination; semiconductor physics; Capacitance; Circuit simulation; Conductivity; Insulated gate bipolar transistors; Nonlinear equations; Physics; Predictive models; Radiative recombination; Scattering; Semiconductor device packaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 1991., Conference Record of the 1991 IEEE

Conference_Location

Dearborn, MI, USA

Print_ISBN

0-7803-0453-5

Type

conf

DOI

10.1109/IAS.1991.178061

Filename

178061