Title :
Insulated gate bipolar transistor (IGBT) modeling using IG-SPICE
Author :
Mitter, Chang Su ; Hefner, Allen R. ; Chen, Dan Y. ; Lee, Fred C.
Author_Institution :
Virginia Power Electron. Center, Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fDate :
Sept. 28 1991-Oct. 4 1991
Abstract :
A physics-based model for the insulated gate bipolar transistor (IGBT) is implemented into the circuit simulation package IG-SPICE. Based on analytical equations describing the semiconductor physics, the model accurately describes the nonlinear junction capacitances, moving boundaries, recombination, and carrier scattering, and effectively predicts the device conductivity modulation. The procedure used to incorporate the model into IG-SPICE, and various methods necessary to ensure convergence are described. The effectiveness of the SPICE-based IGBT model is demonstrated by investigating the static and dynamic current sharing of paralleled IGBTs with different device model parameters. The simulation results are verified by comparison with experimental results.<>
Keywords :
circuit analysis computing; digital simulation; insulated gate bipolar transistors; semiconductor device models; IG-SPICE; carrier scattering; circuit simulation package; conductivity modulation; insulated gate bipolar transistor; moving boundaries; nonlinear junction capacitances; recombination; semiconductor physics; Capacitance; Circuit simulation; Conductivity; Insulated gate bipolar transistors; Nonlinear equations; Physics; Predictive models; Radiative recombination; Scattering; Semiconductor device packaging;
Conference_Titel :
Industry Applications Society Annual Meeting, 1991., Conference Record of the 1991 IEEE
Conference_Location :
Dearborn, MI, USA
Print_ISBN :
0-7803-0453-5
DOI :
10.1109/IAS.1991.178061
