Characterization of high power IGBTs with sinewave current

The characteristics of insulated-gate bipolar transistors (IGBTs) are examined in a single-pulse series resonant circuit under controlled temperature. The aim being to reach the highest possible switching frequency for IGBTs with ratings suitable for industrial use, it is found that both switching energy and on-state losses much be measured, as on-state losses also vary with frequency. It is also found that IGBTs, though having the same datasheet rating, can have properties depending on the manufacturer´s philosophy, giving them totally different behavior at high frequencies. The time needed for the conductivity modulation mechanism to get into action is crucial, giving advantages to devices from manufacturers using low-carrier lifetime and high gain in the bipolar part, such as Toshiba. The same datasheet ratings, in current, voltage, and switching speed, can be achieved with high-carrier lifetime and low gain in the bipolar part, as in Siemens devices, which in the resonant circuit will have their advantages under other modes of operation than in the case of Toshiba.<>