• DocumentCode
    2843922
  • Title

    The low temperature gating characteristics of thyristors

  • Author

    Menhart, S. ; Hudgins, J.L. ; Portnoy, W.M.

  • Author_Institution
    Dept. of Eng. Technol., Arkansas Univ., Little Rock, AR, USA
  • fYear
    1991
  • fDate
    Sept. 28 1991-Oct. 4 1991
  • Firstpage
    1529
  • Abstract
    The gate threshold current of an inverter thyristor (1300 V, 420 A average) was measured as a function of decreasing temperature between 25 degrees C and -180 degrees C. The requirements for successful gating of thyristors are examined. It is shown that, as the temperature falls below about 225 K, the values of the theoretical alphas begin to increase. The rate of increase of the alphas accelerates as the temperature decreases. This form of the alpha suggests that it should be easier to turn the device on at lower temperatures. The measured gate current required to cause the thyristor to latch on has been shown to decrease as the temperature falls; in addition, the gate-current decreases most rapidly at the lowest temperature considered. Consequently, the measured gate current and the alphas show good qualitative agreement at temperatures below 225 K.<>
  • Keywords
    invertors; thyristors; -180 to 25 degC; 1300 V; 420 A; gate threshold current; inverter thyristor; low temperature gating characteristics; thyristors; Anodes; Current measurement; Electric variables measurement; Manufacturing; Pulse circuits; Pulse measurements; Switches; Temperature; Threshold current; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industry Applications Society Annual Meeting, 1991., Conference Record of the 1991 IEEE
  • Conference_Location
    Dearborn, MI, USA
  • Print_ISBN
    0-7803-0453-5
  • Type

    conf

  • DOI
    10.1109/IAS.1991.178063
  • Filename
    178063