DocumentCode
2843922
Title
The low temperature gating characteristics of thyristors
Author
Menhart, S. ; Hudgins, J.L. ; Portnoy, W.M.
Author_Institution
Dept. of Eng. Technol., Arkansas Univ., Little Rock, AR, USA
fYear
1991
fDate
Sept. 28 1991-Oct. 4 1991
Firstpage
1529
Abstract
The gate threshold current of an inverter thyristor (1300 V, 420 A average) was measured as a function of decreasing temperature between 25 degrees C and -180 degrees C. The requirements for successful gating of thyristors are examined. It is shown that, as the temperature falls below about 225 K, the values of the theoretical alphas begin to increase. The rate of increase of the alphas accelerates as the temperature decreases. This form of the alpha suggests that it should be easier to turn the device on at lower temperatures. The measured gate current required to cause the thyristor to latch on has been shown to decrease as the temperature falls; in addition, the gate-current decreases most rapidly at the lowest temperature considered. Consequently, the measured gate current and the alphas show good qualitative agreement at temperatures below 225 K.<>
Keywords
invertors; thyristors; -180 to 25 degC; 1300 V; 420 A; gate threshold current; inverter thyristor; low temperature gating characteristics; thyristors; Anodes; Current measurement; Electric variables measurement; Manufacturing; Pulse circuits; Pulse measurements; Switches; Temperature; Threshold current; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Society Annual Meeting, 1991., Conference Record of the 1991 IEEE
Conference_Location
Dearborn, MI, USA
Print_ISBN
0-7803-0453-5
Type
conf
DOI
10.1109/IAS.1991.178063
Filename
178063
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