Characteristics of GTOs and high voltage MCTs in high power soft-switching converters

Author

De Doncker, R.W. ; Demirci, O. ; Arthur, S. ; Temple, V.A.

Author_Institution

General Electric Corp., Schenectady, NY, USA

fYear

1991

fDate

Sept. 28 1991-Oct. 4 1991

Firstpage

1539

Abstract

The authors present and summarize key HVMCT (high-voltage MOS-controlled thyristor) characterization results gathered to date as they relate to HV MCT dynamic performance during zero voltage switching. HV MCTs have been developed and tested in a zero-voltage soft-switching test circuit. The devices have static breakdown voltages of 3000 V and turn-off losses that are comparable to those of fast GTOs rate for 2500 V peak. However, the onstate losses of the HV MCTs are slightly higher assuming 8 dies can be paralleled to match the current handling capability of the GTO.<>

Keywords

metal-insulator-semiconductor devices; power convertors; switching circuits; thyristor applications; 3 kV; dynamic performance; high power soft-switching converters; high-voltage MOS-controlled thyristor; static breakdown voltages; test circuit; turn-off losses; zero voltage switching; Circuit testing; Impedance; MOSFETs; Resonance; Switched capacitor circuits; Switching circuits; Switching converters; Switching loss; Thyristors; Zero voltage switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 1991., Conference Record of the 1991 IEEE

Conference_Location

Dearborn, MI, USA

Print_ISBN

0-7803-0453-5

Type

conf

DOI

10.1109/IAS.1991.178065

Filename

178065