DocumentCode
2844348
Title
Linearizing high power amplifiers with emphasis on GaN
Author
Katz, Allen ; Dorval, Roger
Author_Institution
The College of New Jersey, PO Box 7718, Ewing, 08628-0718, USA
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
The trades involved in the decision to include linearization in the design of a microwave high power amplifier will be discussed. Emphasis will be placed on the use of predistortion linearization, and particularly on its application with amplifiers employing recently available microwave GaN FET power devices.
Keywords
Gallium nitride; HEMTs; Predistortion; GaN; SSPA; distortion correction; high power amplifier; linearizer; microwave; predistortion;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6258254
Filename
6258254
Link To Document