Title :
Linearizing high power amplifiers with emphasis on GaN
Author :
Katz, Allen ; Dorval, Roger
Author_Institution :
The College of New Jersey, PO Box 7718, Ewing, 08628-0718, USA
Abstract :
The trades involved in the decision to include linearization in the design of a microwave high power amplifier will be discussed. Emphasis will be placed on the use of predistortion linearization, and particularly on its application with amplifiers employing recently available microwave GaN FET power devices.
Keywords :
Gallium nitride; HEMTs; Predistortion; GaN; SSPA; distortion correction; high power amplifier; linearizer; microwave; predistortion;
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2012.6258254
