Title :
Recent and Future IGBT Evolution
Author :
Majumdar, Gourab ; Minato, Tadaharu
Author_Institution :
Mitsubishi Electr. Corp., Tokyo
Abstract :
IGBT module has many variations in order to find out an optimum saddle point on a triangle trade-off relationship among low loss, fast switching and robustness. One of the best solution, especially for automotive application, which requires the perfect safety, is the IPM with a protection circuit built-in inside of power module. In IPM, low loss characteristics could be achieved by the advanced IGBT structure like a CSTBT. Not only individual technology advance for both Silicon chip and package, but also chip-package interconnections are extremely important to achieve the best performance as a power module.
Keywords :
insulated gate bipolar transistors; power integrated circuits; IGBT module; IPM; automotive electronics; chip-package interconnection; optimum saddle point; protection circuit; triangle trade-off relationship; Cost function; Diodes; Hybrid electric vehicles; Insulated gate bipolar transistors; Inverters; Multichip modules; Research and development; Semiconductor optical amplifiers; Spirals; Thyristors; CSTBT; IGBT; IPM; SOA;
Conference_Titel :
Power Conversion Conference - Nagoya, 2007. PCC '07
Conference_Location :
Nagoya
Print_ISBN :
1-4244-0844-X
Electronic_ISBN :
1-4244-0844-X
DOI :
10.1109/PCCON.2007.372992