High-temperature characteristics of 1.3-μm SSC-ASM-PBH LDs with selectively grown multiple-stripe recombination layers

Multiple-stripe planar buried heterostructure (MS-PBH) was newly developed to improve the high-temperature characteristics of spot-size converter integrated all-selective MOVPE-grown planar buried heterostructure laser diodes (SSC-ASM-PBH LDs). Recombination-layer stripes were simultaneously grown with the active layer and thickness-tapered waveguide by narrow-stripe selective MOVPE, and inserted in the current-blocking layers. The recombination-layer stripes effectively suppressed the leakage current in a high-temperature and high-power range. A maximum output power of 37 mW and a small dope-efficiency degradation of 1.25 dB were obtained even at 85°C while maintaining a small coupling loss to a flat-ended single-mode fiber of less than 2.5 dB. These excellent high-temperature characteristics and good coupling characteristics are very attractive for achieving low-cost light-source modules for use in optical access networks