Title :
Crosstalk and Gate Oxide Reliability Analysis in Graphene Nanoribbon Interconnects
Author :
Das, Debaprasad ; Rahaman, Hafizur
Author_Institution :
Sch. of VLSI Technol., Bengal Eng. & Sci. Univ., Shibpυr, India
Abstract :
We present the effects of cross talk in graphene nanoribbon (GNR) interconnects for 16 nm technology node. This is the first time that the cross talk analysis is presented in GNR interconnects. The electrical equivalent model is used to derive the electrical circuit parameters for GNR interconnects and cross talk analysis is performed for noise, and overshoot/undershoot analysis. The results are compared with that of copper (Cu) and multi-wall carbon nanotube (MWCNT) based interconnects. The near-end cross talk noise and overshoot/undershoot are greater in GNR as compared to that of Cu and MWCNT based interconnects, whereas the far-end noise and overshoot/undershoot in GNR are smaller as compared to Cu and greater as compared to that of MWCNT based interconnects. The impact of overshoot/undershoot on the gate oxide of MOS devices has been investigated and it is found that GNR based interconnect has two orders of magnitude less failure-in-time rate than Cu interconnects.
Keywords :
VLSI; carbon nanotubes; crosstalk; failure analysis; graphene; integrated circuit interconnections; integrated circuit reliability; nanoribbons; GNR interconnect; MOS device; MWCNT based interconnect; crosstalk analysis; electrical circuit parameter; electrical equivalent model; failure-in-time rate; gate oxide reliability analysis; graphene nanoribbon interconnect; multiwall carbon nanotube based interconnect; near-end crosstalk noise; overshoot-undershoot analysis; Copper; Crosstalk; Integrated circuit interconnections; Logic gates; Noise; Reliability; Very large scale integration; Graphene nanoribbon (GNR); carbon Nanotube (CNT); crosstalk; delay; interconnect; noise; overshoot/undershoot;
Conference_Titel :
Electronic System Design (ISED), 2011 International Symposium on
Conference_Location :
Kochi, Kerala
Print_ISBN :
978-1-4577-1880-9
DOI :
10.1109/ISED.2011.54
