DocumentCode :
2844743
Title :
Silicon on sapphire complementary MOS memory systems
Author :
Allison, J. ; Burns, Jack ; Heiman, F.
Author_Institution :
RCA Laboratories, Princeton, NJ, USA
Volume :
X
fYear :
1967
fDate :
15-17 Feb. 1967
Firstpage :
76
Lastpage :
77
Keywords :
Capacitance; Circuits; Delay; Flip-flops; Laboratories; MOSFETs; Power dissipation; Semiconductor films; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1967 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1967.1154522
Filename :
1154522
Link To Document :
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