DocumentCode
2844758
Title
A single chip multiband power amplifier using active load modulation techniques
Author
Lee, Geunyong ; Lee, Jongsoo ; Song, Jong-In
Author_Institution
Department of Nano-bio Materials and Electronics, Gwangju Institute of Science and Technolgy, Oryoung-dong, Buk-gu, 500-712, Korea
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
This paper presents a single chip multiband power amplifier (MBPA) using a proposed active load modulation (ALM) technique. Based on Doherty PA´s concept, the single chip MBPA consists of a main amplifier, an auxiliary amplifier, and transmission lines connecting two amplifiers to modulate the main amplifier´s load line over the frequency. The ALM technique achieves the desired load line at specific frequency band by three parameters; RF current ratio of the main amplifier to the auxiliary amplifier (α), a characteristic impedance (ZT ) and an electrical length (θ) of a transmission line. The fabricated single chip MBPA operates from 1.6 to 2 GHz with over a 10 dB of gain using the proposed ALM technique. It shows 35.5 % of power added efficiency (PAE), and 25.5 dBc of adjacent channel leakage ratio (ACLR1) at 27 dBm output power with the 10 MHz BW 16QAM LTE signal from 1.6GHz to 2GHz.
Keywords
Frequency modulation; Gain; Impedance; Impedance matching; Power amplifiers; Power transmission lines; Doherty; active load modulation; power amplifiers; single chip multiband;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6258277
Filename
6258277
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