DocumentCode :
2844758
Title :
A single chip multiband power amplifier using active load modulation techniques
Author :
Lee, Geunyong ; Lee, Jongsoo ; Song, Jong-In
Author_Institution :
Department of Nano-bio Materials and Electronics, Gwangju Institute of Science and Technolgy, Oryoung-dong, Buk-gu, 500-712, Korea
fYear :
2012
fDate :
17-22 June 2012
Firstpage :
1
Lastpage :
3
Abstract :
This paper presents a single chip multiband power amplifier (MBPA) using a proposed active load modulation (ALM) technique. Based on Doherty PA´s concept, the single chip MBPA consists of a main amplifier, an auxiliary amplifier, and transmission lines connecting two amplifiers to modulate the main amplifier´s load line over the frequency. The ALM technique achieves the desired load line at specific frequency band by three parameters; RF current ratio of the main amplifier to the auxiliary amplifier (α), a characteristic impedance (ZT) and an electrical length (θ) of a transmission line. The fabricated single chip MBPA operates from 1.6 to 2 GHz with over a 10 dB of gain using the proposed ALM technique. It shows 35.5 % of power added efficiency (PAE), and 25.5 dBc of adjacent channel leakage ratio (ACLR1) at 27 dBm output power with the 10 MHz BW 16QAM LTE signal from 1.6GHz to 2GHz.
Keywords :
Frequency modulation; Gain; Impedance; Impedance matching; Power amplifiers; Power transmission lines; Doherty; active load modulation; power amplifiers; single chip multiband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
ISSN :
0149-645X
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2012.6258277
Filename :
6258277
Link To Document :
بازگشت