• DocumentCode
    2844758
  • Title

    A single chip multiband power amplifier using active load modulation techniques

  • Author

    Lee, Geunyong ; Lee, Jongsoo ; Song, Jong-In

  • Author_Institution
    Department of Nano-bio Materials and Electronics, Gwangju Institute of Science and Technolgy, Oryoung-dong, Buk-gu, 500-712, Korea
  • fYear
    2012
  • fDate
    17-22 June 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This paper presents a single chip multiband power amplifier (MBPA) using a proposed active load modulation (ALM) technique. Based on Doherty PA´s concept, the single chip MBPA consists of a main amplifier, an auxiliary amplifier, and transmission lines connecting two amplifiers to modulate the main amplifier´s load line over the frequency. The ALM technique achieves the desired load line at specific frequency band by three parameters; RF current ratio of the main amplifier to the auxiliary amplifier (α), a characteristic impedance (ZT) and an electrical length (θ) of a transmission line. The fabricated single chip MBPA operates from 1.6 to 2 GHz with over a 10 dB of gain using the proposed ALM technique. It shows 35.5 % of power added efficiency (PAE), and 25.5 dBc of adjacent channel leakage ratio (ACLR1) at 27 dBm output power with the 10 MHz BW 16QAM LTE signal from 1.6GHz to 2GHz.
  • Keywords
    Frequency modulation; Gain; Impedance; Impedance matching; Power amplifiers; Power transmission lines; Doherty; active load modulation; power amplifiers; single chip multiband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
  • Conference_Location
    Montreal, QC, Canada
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4673-1085-7
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2012.6258277
  • Filename
    6258277