Title :
Properties and defects study on GaAs based epitaxy materials
Author :
Liqi, Cui ; Zhang, Wenjun ; Zhang, Ronggui ; Xiaobai, Li
Author_Institution :
13th Inst., Minist. of Electr. Eng., China
Abstract :
This paper presents the R&D of GaAs-based heterojunction materials, describes mainly the material properties and the characterization techniques. The microwave device has been fabricated with the as-grown structure material and the testing frequency which has entered into W-band has shown
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; microwave field effect transistors; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; GaAs; GaAs heterojunction material; MODFET; W-band; defects; microwave device; molecular beam epitaxial growth; Epitaxial growth; Frequency; Gallium arsenide; HEMTs; Heterojunctions; MODFETs; Molecular beam epitaxial growth; Ohmic contacts; Research and development; Superlattices;
Conference_Titel :
Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4308-5
DOI :
10.1109/ICMMT.1998.768387
