Title :
High Power Density Converter using SiC-SBD
Author :
Omura, I. ; Tsukuda, M. ; Saito, W. ; Domon, T.
Author_Institution :
Toshiba Corp. Semicond. Co., Kawasaki
Abstract :
This paper reports on the possibility of a high output power density converter by demonstrating a small volume DC-DC down converter using a 600 V superjunction MOSFET (SJ-MOSFET) and silicon carbide Schottky barrier diode (SiC-SBD). The output power density of the demonstrated DC-DC down converter was 50 W/cc, which is the future target of high power density converters.
Keywords :
DC-DC power convertors; Schottky diodes; power MOSFET; silicon compounds; DC-DC down converter; SJ-MOSFET; SiC; SiC-SBD; high-power density converter; power converters; silicon carbide Schottky barrier diode; superjunction MOSFET; voltage 600 V; DC-DC power converters; Impedance; MOSFET circuits; Power MOSFET; Power electronics; Power generation; Schottky diodes; Semiconductor diodes; Switching converters; Switching loss; Eoss; Qoss; SiC-SBD; Superjunction-MOSFET;
Conference_Titel :
Power Conversion Conference - Nagoya, 2007. PCC '07
Conference_Location :
Nagoya
Print_ISBN :
1-4244-0844-X
Electronic_ISBN :
1-4244-0844-X
DOI :
10.1109/PCCON.2007.373024
