DocumentCode :
2845662
Title :
Direct Coupled FET Logic (DCFL) circuit for GaAs LSIC application
Author :
Yanyang, Xu ; Xiaoguang, Zheng ; Jingchen, Hao
Author_Institution :
Nat. Key Lab. of ASIC, Hebei, China
fYear :
1998
fDate :
1998
Firstpage :
913
Lastpage :
916
Abstract :
Direct Coupled FET Logic circuit (DCFL) has a simple structure and high speed with very low power dissipation. It is the most widely used for high density GaAs digital integrated circuits at the time. Nevertheless, the conventional E/D DCFL has some disadvantages like small noise margin, difficult fabrication process, sensitivity to temperature shifts and low yield. This paper describes E/D super buffer logic and E/E mode logic. The DC, transient and temperature performance are studied and compared. The E/D and E/E DCFL circuit was fabricated using a 1 μm TiPtAu recess gate process. The minimum value of propagation delay time with fan-out of one is 56 ps and 83 ps for E/D and E/E logic respectively. Through the temperature test from -50°C to 100°C, it was found that E/E logic has a better temperature performance over E/D logic and has improved yield
Keywords :
III-V semiconductors; MESFET integrated circuits; delays; direct coupled FET logic; field effect digital integrated circuits; field effect logic circuits; gallium arsenide; high-speed integrated circuits; large scale integration; logic design; transient analysis; -50 to 100 C; 1 micron; 56 ps; 83 ps; DC performance; DCFL circuit; E/D super buffer logic; E/E mode logic; GaAs; GaAs LSI circuit application; GaAs digital integrated circuits; TiPtAu; TiPtAu recess gate process; direct coupled FET logic; temperature performance; transient performance; Coupling circuits; Digital integrated circuits; FETs; Fabrication; Gallium arsenide; Integrated circuit noise; Logic circuits; Logic testing; Power dissipation; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4308-5
Type :
conf
DOI :
10.1109/ICMMT.1998.768438
Filename :
768438
Link To Document :
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