• DocumentCode
    2845665
  • Title

    Nonlinear optical gains in polarization switching of semiconductor lasers

  • Author

    Takahashi, Yutaka ; Neogi, Arup ; Kawaguchi, Hitoshi

  • Author_Institution
    Dept. of Electr. & Inf. Eng., Yamagata Univ., Yonezawa, Japan
  • fYear
    1998
  • fDate
    11-15 May 1998
  • Firstpage
    745
  • Lastpage
    748
  • Abstract
    We have numerically studied the nonlinear gain coefficients for the optical fields in parallel and orthogonal polarizations in semiconductor lasers by solving the equation of motion for the density matrix in perturbation series. The electronic band structures and the transition matrix elements used in the calculations are obtained by diagonalizing Luttinger´s Hamiltonian. In the present analysis for InGaAsP lasers, the cross-saturation coefficient for the parallel polarizations is twice as large as the self-saturation. And the cross-saturation coefficient for the orthogonal polarizations, which affects the polarization switching and polarization bistable operations of the laser, rests between the two. The relative magnitude of self-saturation coefficients and cross-saturation coefficients for orthogonal polarizations satisfies the condition for polarization bistable operations
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light polarisation; semiconductor lasers; InGaAsP; InGaAsP lasers; cross-saturation coefficient; density matrix; diagonalizing Luttinger´s Hamiltonian; electronic band structures; equation of motion; nonlinear optical gains; optical fields; orthogonal polarizations; perturbation series; polarization bistable operations; polarization switching; self-saturation; semiconductor lasers; transition matrix elements; Communication switching; Equations; Laser modes; Nonlinear optics; Optical bistability; Optical materials; Optical polarization; Optical saturation; Semiconductor lasers; Tellurium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1998 International Conference on
  • Conference_Location
    Tsukuba
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-4220-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1998.712757
  • Filename
    712757