DocumentCode
2845772
Title
All-silicon telecom wavelength detector fabricated on silicon-on-insulator
Author
Haret, Laurent-Daniel ; Checoury, Xavier ; Han, Zheng ; Boucaud, Philippe ; Combrie, Sylvain ; De Rossi, Alfredo
Author_Institution
Inst. d´´Electron. Fondamentale, Univ. Paris Sud 11, Orsay, France
fYear
2010
fDate
19-23 Sept. 2010
Firstpage
1
Lastpage
3
Abstract
We demonstrate an ultra-compact all-silicon metal-semiconductor-metal photodetector operating in the telecom band. Resonant absorption is obtained through two-dimensional photonic crystal cavities on silicon-on-insulator with quality factors around 80,000. The waveguide integrated detector exhibits a cw response up to 20 mA/W.
Keywords
Q-factor; circuit resonance; metal-semiconductor-metal structures; photodetectors; photonic crystals; silicon-on-insulator; all-silicon telecom wavelength detector; photonic crystal cavity; quality factor; resonant absorption; silicon-on-insulator; telecom band; ultra-compact all-silicon metal-semiconductor-metal photodetector; waveguide integrated detector; Cavity resonators; Optical device fabrication; Optical fibers; Q factor; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Communication (ECOC), 2010 36th European Conference and Exhibition on
Conference_Location
Torino
Print_ISBN
978-1-4244-8536-9
Electronic_ISBN
978-1-4244-8534-5
Type
conf
DOI
10.1109/ECOC.2010.5621305
Filename
5621305
Link To Document