• DocumentCode
    2845951
  • Title

    Continuous-ClassF3 power amplifier mode varying simultaneously first 3 harmonic impedances

  • Author

    Carrubba, V. ; Quay, R. ; Schlechtweg, M. ; Ambacher, O. ; Akmal, M. ; Lees, J. ; Benedikt, J. ; Tasker, P.J. ; Cripps, S.C.

  • Author_Institution
    Fraunhofer Institute for Applied Solid-State Physics, Tullastrasse 72, 79108 Freiburg, Germany
  • fYear
    2012
  • fDate
    17-22 June 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This paper presents for the first time the broadband Continuous-ClassF3 mode power amplifier (PA) extended to include a variable reactance third harmonic impedance. It will be demonstrated that by proper manipulation of the voltage and current waveforms different optimum impedance solutions can be identified. When designing PAs, the harmonic impedances cannot easily be constraint to open-circuit and/or short-circuit points with varying frequency. Therefore, the possibility to vary the third harmonic reactance as well as the second harmonic and fundamental reactance with frequency would allow for an easier, more flexible and achievable design requirement. Measurements on a GaN power transistor have delivered around 34.5–35.9 dBm of output power, 80–85 % of drain efficiency and 13.7–15.5 dB of available gain at 1 GHz of fundamental frequency for the various combination of first three load solutions. The measurements demonstrate that constant or greater output performance can be obtained over a wide PA design space when varying properly the first three harmonic loads. The different reactive impedance solutions carried out at the single frequency can then be translated into frequency domain, allowing the design of high power-efficiency broadband power amplifiers.
  • Keywords
    Abstracts; Capacitance; Gallium nitride; Broadband amplifiers; gallium nitride; microwave devices; microwave measurements; power amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
  • Conference_Location
    Montreal, QC, Canada
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4673-1085-7
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2012.6258343
  • Filename
    6258343