DocumentCode :
2845964
Title :
Fast Inverter Loss Simulation and Silicon Carbide Device Evaluation for Hybrid Electric Vehicle Drives
Author :
Bryant, A.T. ; Roberts, G.J. ; Walker, A. ; Mawby, P.A.
Author_Institution :
Warwick Univ., Coventry
fYear :
2007
fDate :
2-5 April 2007
Firstpage :
1017
Lastpage :
1024
Abstract :
This paper presents an integrated framework for modelling inverter performance and evaluating power devices in hybrid electric vehicle drives. Based in MATLAB/Simulink, it uses a novel method of decoupling the device and inverter simulation to maintain high accuracy of power losses and devices temperatures, and achieve faster than real time inverter simulation. An illustration is given for a full hybrid vehicle for different driving cycles. Device models are included for silicon carbide Schottky diodes as well as silicon IGBTs and PIN diodes, allowing evaluation of the new material devices. The simulation framework offers the potential to rapidly improve the inverter and powertrain design process, and to evaluate device selection quickly.
Keywords :
Schottky diodes; hybrid electric vehicles; insulated gate bipolar transistors; invertors; p-i-n diodes; power semiconductor diodes; PIN diodes; Schottky diodes; devices temperatures; hybrid electric vehicle drives; inverter loss; power devices; power losses; powertrain design process; silicon IGBT; silicon carbide device; Hybrid electric vehicles; Insulated gate bipolar transistors; Inverters; MATLAB; Mathematical model; Mechanical power transmission; Schottky diodes; Silicon carbide; Temperature; Vehicle driving; compact modeling; driving cycle; hybrid vehicle; power semiconductor devices; silicon carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Conversion Conference - Nagoya, 2007. PCC '07
Conference_Location :
Nagoya
Print_ISBN :
1-4244-0844-X
Electronic_ISBN :
1-4244-0844-X
Type :
conf
DOI :
10.1109/PCCON.2007.373091
Filename :
4239281
Link To Document :
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