• DocumentCode
    2846025
  • Title

    Evaluation of SiGe:C HBT intrinsic reliabillty using conventional & step stress methodologies

  • Author

    Gaw, Craig ; Arnold, T. ; Martin, R. ; Zhang, L. ; Zupac, D.

  • fYear
    2005
  • fDate
    Oct. 30, 2005
  • Firstpage
    43
  • Lastpage
    56
  • Keywords
    Bonding; Circuit testing; Degradation; Equations; Heterojunction bipolar transistors; Integrated circuit testing; Temperature; Thermal conductivity; Thermal stresses; Virtual colonoscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ROCS Workshop, 2005. [Reliability of Compound Semiconductors]
  • Print_ISBN
    0-7908-0106-X
  • Type

    conf

  • DOI
    10.1109/ROCS.2005.201552
  • Filename
    1563936
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2846025