DocumentCode
2846050
Title
A 25.6 W 13.56 MHz wireless power transfer system with a 94% efficiency GaN Class-E power amplifier
Author
Chen, W. ; Chinga, R.A. ; Yoshida, S. ; Lin, J. ; Chen, C. ; Lo, W.
Author_Institution
Industrial Technology Research Institute, Hsinchu, 31040, Taiwan
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
In this work, we propose the design and implementation of a 13.56 MHz GaN Class-E power amplifier, which takes into account transistor parasitic effects. The design uses the parasitic capacitance of the transistor to replace the charging capacitance, simplifying the circuit structure and obtaining a 93.6% efficiency at output power of 26.8 W. In addition, a wireless power transfer system using the proposed Class-E amplifier is demonstrated, achieving a 73.4% system efficiency when the power delivered to the load is 25.6 W.
Keywords
Gallium nitride; Logic gates; Power amplifiers; Power generation; Power transmission; Transistors; Wireless communication; Power transmission; energy efficiency; gallium nitride; power MOSFET; power amplifiers; silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6258349
Filename
6258349
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