• DocumentCode
    2846050
  • Title

    A 25.6 W 13.56 MHz wireless power transfer system with a 94% efficiency GaN Class-E power amplifier

  • Author

    Chen, W. ; Chinga, R.A. ; Yoshida, S. ; Lin, J. ; Chen, C. ; Lo, W.

  • Author_Institution
    Industrial Technology Research Institute, Hsinchu, 31040, Taiwan
  • fYear
    2012
  • fDate
    17-22 June 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this work, we propose the design and implementation of a 13.56 MHz GaN Class-E power amplifier, which takes into account transistor parasitic effects. The design uses the parasitic capacitance of the transistor to replace the charging capacitance, simplifying the circuit structure and obtaining a 93.6% efficiency at output power of 26.8 W. In addition, a wireless power transfer system using the proposed Class-E amplifier is demonstrated, achieving a 73.4% system efficiency when the power delivered to the load is 25.6 W.
  • Keywords
    Gallium nitride; Logic gates; Power amplifiers; Power generation; Power transmission; Transistors; Wireless communication; Power transmission; energy efficiency; gallium nitride; power MOSFET; power amplifiers; silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
  • Conference_Location
    Montreal, QC, Canada
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4673-1085-7
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2012.6258349
  • Filename
    6258349