Title :
Large-signal insulated-gate field-effect transistor model for computer circuit simulation
Author :
Hodges, D.A. ; Shichman, H.
Author_Institution :
Bell Laboratories, Inc., Murray Hill, NJ, USA
Keywords :
Circuit simulation; FETs; Insulation; Integrated circuit modeling; Nonlinear equations; Parasitic capacitance; Solid modeling; Solid state circuits; Telephony; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1968 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1968.1154612
