مرکز منطقه ای اطلاع رساني علوم و فناوري - Physical evidence of electromigration in GaAs PHEMT Schottky diodes operating at high forward current density

DocumentCode :

2846223

Title :

Physical evidence of electromigration in GaAs PHEMT Schottky diodes operating at high forward current density

Author :

Chou, Y.C. ; Leung, D. ; Biedenbender, M. ; Eng, D. ; Kan, Q. ; Lai, R. ; Block, T. ; Oki, A.

fYear :

2005

fDate :

Oct. 30, 2005

Firstpage :

167

Lastpage :

173

Keywords :

Current density; Electromigration; Frequency; Gallium arsenide; Gold; Guidelines; PHEMTs; Schottky barriers; Schottky diodes; Space technology;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

ROCS Workshop, 2005. [Reliability of Compound Semiconductors]

Print_ISBN :

0-7908-0106-X

Type :

conf

DOI :

10.1109/ROCS.2005.201565

Filename :

1563949

Link To Document :