DocumentCode :
2846223
Title :
Physical evidence of electromigration in GaAs PHEMT Schottky diodes operating at high forward current density
Author :
Chou, Y.C. ; Leung, D. ; Biedenbender, M. ; Eng, D. ; Kan, Q. ; Lai, R. ; Block, T. ; Oki, A.
fYear :
2005
fDate :
Oct. 30, 2005
Firstpage :
167
Lastpage :
173
Keywords :
Current density; Electromigration; Frequency; Gallium arsenide; Gold; Guidelines; PHEMTs; Schottky barriers; Schottky diodes; Space technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ROCS Workshop, 2005. [Reliability of Compound Semiconductors]
Print_ISBN :
0-7908-0106-X
Type :
conf
DOI :
10.1109/ROCS.2005.201565
Filename :
1563949
Link To Document :
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