Physical evidence of electromigration in GaAs PHEMT Schottky diodes operating at high forward current density

Author

Chou, Y.C. ; Leung, D. ; Biedenbender, M. ; Eng, D. ; Kan, Q. ; Lai, R. ; Block, T. ; Oki, A.

fYear

2005

fDate

Oct. 30, 2005

Firstpage

167

Lastpage

173

Keywords

Current density; Electromigration; Frequency; Gallium arsenide; Gold; Guidelines; PHEMTs; Schottky barriers; Schottky diodes; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

ROCS Workshop, 2005. [Reliability of Compound Semiconductors]

Print_ISBN

0-7908-0106-X

Type

DOI

10.1109/ROCS.2005.201565

Filename

1563949

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