DocumentCode :
28463
Title :
Complementary Magnetic Tunnel Junction Logic
Author :
Friedman, Joseph S. ; Sahakian, Alan V.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
Volume :
61
Issue :
4
fYear :
2014
fDate :
Apr-14
Firstpage :
1207
Lastpage :
1210
Abstract :
This brief proposes and analyzes a novel logic family composed solely of magnetic tunnel junctions (MTJs) to form complimentary pull-up and pull-down networks. This logic family solves the challenge of direct cascading in spintronic logic circuits while also providing non-volatile data storage. The increased logic density possible with complementary MTJs coupled with a charge pulse switching mechanism driven by ferromagnet polarization permits highly efficient logical computation. Furthermore, the presence of non-volatile memory within the logic structure provides a feasible hardware for non-von Neumann computer architectures.
Keywords :
MRAM devices; logic circuits; magnetic switching; magnetic tunnelling; magnetoelectronics; charge pulse switching mechanism; complementary magnetic tunnel junction logic; complimentary pull-down networks; complimentary pull-up networks; ferromagnet polarization; logic density; nonvolatile data storage; nonvolatile memory; nonvon Neumann computer architectures; spintronic logic circuits; CMOS integrated circuits; Junctions; Logic gates; Magnetic tunneling; Magnetization; Switches; Wires; Beyond CMOS computing; magnetic tunnel junction (MTJ); non-von Neumann architecture; spintronic logic;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2014.2306395
Filename :
6763088
Link To Document :
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