Title :
On Development and Expectation of Memristor
Author :
Hui, Xu ; XiaoBo, Tian ; Hongshan, Nie ; Qingjiang, Li ; Haijun, Liu ; Xin, Xu
Author_Institution :
ESSS Center, Nat. Univ. of Defense Technol., Changsha, China
Abstract :
The memristor is a kind of special nonlinear circuit element, its appearance draws worldwide attention in electro circuit research and designing since HP laboratory released the invention on May 1, 2008. In this paper, physical model of memristor is described, mechanism of charge memory is proved mathematically by analyzing physical realization of memristor, and hot issues about it are analyzed. In the end, several thinking about memristor and its development are given.
Keywords :
memristors; HP laboratory; charge memory; electro circuit research; memristor; nonlinear circuit element; physical model; Immune system; Integrated circuit modeling; Mathematical model; Memristors; Random access memory; Resistance; Switches; charge memory; memristor; nanotechnology; nonlinear circuit;
Conference_Titel :
Intelligent System Design and Engineering Application (ISDEA), 2010 International Conference on
Conference_Location :
Changsha
Print_ISBN :
978-1-4244-8333-4
DOI :
10.1109/ISDEA.2010.339
