DocumentCode
2846420
Title
On Development and Expectation of Memristor
Author
Hui, Xu ; XiaoBo, Tian ; Hongshan, Nie ; Qingjiang, Li ; Haijun, Liu ; Xin, Xu
Author_Institution
ESSS Center, Nat. Univ. of Defense Technol., Changsha, China
Volume
1
fYear
2010
fDate
13-14 Oct. 2010
Firstpage
1035
Lastpage
1038
Abstract
The memristor is a kind of special nonlinear circuit element, its appearance draws worldwide attention in electro circuit research and designing since HP laboratory released the invention on May 1, 2008. In this paper, physical model of memristor is described, mechanism of charge memory is proved mathematically by analyzing physical realization of memristor, and hot issues about it are analyzed. In the end, several thinking about memristor and its development are given.
Keywords
memristors; HP laboratory; charge memory; electro circuit research; memristor; nonlinear circuit element; physical model; Immune system; Integrated circuit modeling; Mathematical model; Memristors; Random access memory; Resistance; Switches; charge memory; memristor; nanotechnology; nonlinear circuit;
fLanguage
English
Publisher
ieee
Conference_Titel
Intelligent System Design and Engineering Application (ISDEA), 2010 International Conference on
Conference_Location
Changsha
Print_ISBN
978-1-4244-8333-4
Type
conf
DOI
10.1109/ISDEA.2010.339
Filename
5743353
Link To Document