28mW 10Gbps transmitter for 120GHz ASK transceiver

Author

Katayama, Kosuke ; Motoyoshi, Mizuki ; Takano, Kyoya ; Ono, Naoko ; Fujishima, Minoru

Author_Institution

Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima, 739-8530, Japan

fYear

2012

fDate

17-22 June 2012

Firstpage

1

Lastpage

3

Abstract

In this paper, we describe a low-power millimeter-wave amplitude-shift-keying transmitter architecture and its design technique. This architecture adopts a push-push-type oscillator. The load-pull-like design technique for the oscillator enables us to extract large output power with the same power dissipation and to remove the power amplifier from the transmitter. The transmitter is fabricated using a 40nm CMOS technology. The core area is 0.11mm². The measured carrier frequency is adjusted by the backgate voltages of MOSFETs centering at 122GHz. The maximum output power is +0.1dBm with 28.3mW power dissipation. The on-off ratio is 18.2dB and the maximum modulation speed is more than 10Gbps.

Keywords

Amplitude shift keying; CMOS integrated circuits; Oscillators; Power amplifiers; Power generation; Transmitters; D-band transmitter; amplitude shift keying; load pull optimization; millimeter wave; power amplifier less; push-push oscillator;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International

Conference_Location

Montreal, QC, Canada

ISSN

0149-645X

Print_ISBN

978-1-4673-1085-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2012.6258376

Filename

6258376