• DocumentCode
    2846753
  • Title

    A 1.2V broadband D-band power amplifier with 13.2-dBm output power in standard RF 65-nm CMOS

  • Author

    Tsai, Zuo-Min ; Liao, Hsin-Chiang ; Hsiao, Yuan-Hong ; Wang, Huei ; Liu, Jenny Yi-Chun ; Chang, Mau-Chung Frank ; Teng, Yu-Ming ; Huang, Guo-Wei

  • Author_Institution
    Department of Electrical Engineering, National Chung Cheng University, Chiayi, Taiwan, 621, R.O.C.
  • fYear
    2012
  • fDate
    17-22 June 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A D-band CMOS power amplifier in 65-nm CMOS with wider than 30 GHz small signal gain bandwidth is developed by using proposed impedance transform network to split original matching network into 8-ways to integrate 8 transistors. Without using additional combining networks, the 4-stage power amplifier achieves 13.2 dBm saturation output power with 1.2 V supply at 140 GHz in a compact size of 0.38 mm2. The peak power-added efficiency is 14.6% with 115.2 mW dc power.
  • Keywords
    CMOS integrated circuits; CMOS technology; Frequency measurement; Gain measurement; Impedance; Semiconductor device measurement; Topology; CMOS power amplifier; D-band; impedance transform network; power combining;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
  • Conference_Location
    Montreal, QC, Canada
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4673-1085-7
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2012.6258394
  • Filename
    6258394
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2846753